Author Affiliations
Abstract
1 State Key Laboratory of Silicon Materials, Key Laboratory for Biomedical Engineering of Ministry of Education, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2 Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
3 Department of Electronic Science and Technology, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
4 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Amorphous oxide semiconductors (AOS) have unique advantages in transparent and flexible thin film transistors (TFTs) applications, compared to low-temperature polycrystalline-Si (LTPS). However, intrinsic AOS TFTs are difficult to obtain field-effect mobility (μFE) higher than LTPS (100 cm2/(V·s)). Here, we design ZnAlSnO (ZATO) homojunction structure TFTs to obtainμFE = 113.8 cm2/(V·s). The device demonstrates optimized comprehensive electrical properties with an off-current of about 1.5 × 10–11 A, a threshold voltage of –1.71 V, and a subthreshold swing of 0.372 V/dec. There are two kinds of gradient coupled in the homojunction active layer, which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility. Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
thin film transistors homojunction carrier mobility amorphous oxides Journal of Semiconductors
2023, 44(5): 052101
1 浙江大学材料科学与工程学院，浙江 杭州 310027
2 浙江大学温州研究院，温州市光电及纳米新材料重点实验室，浙江 温州 325006
宽禁带半导体具有独特的电子结构、丰富的微纳结构、低温可控制备、可柔性透明化、化学稳定性好、物丰价廉等特点，成为信息技术与环境技术新的重要基础材料。以氧化锌和钙钛矿这两种宽禁带半导体材料为例，分别介绍了两种材料的制备原理及方法、光电特性及其在紫外光源、透明导电薄膜、发光二极管等领域的应用。最后对其发展进行了展望。
材料 氧化锌 紫外光源 透明导电薄膜 钙钛矿 发光二极管 光学学报
2022, 42(17): 1716001
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Frontiers of Optoelectronics
2008, 1(1): 147
